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(PR) Micron Develops 512 GB DDR5 RDIMM Server Memory Reaching 9200 MT/s

techpowerup.com · 10h · first report

(PR) Micron Develops 512 GB DDR5 RDIMM Server Memory Reaching 9200 MT/s

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Across 2 sources · syndicated copies counted once

Micron Technology, Inc. (Nasdaq: MU), today announced a major milestone in memory innovation with the successful demonstration of the world's first 512 GB DDR5 module on multiple server platforms. The achievement reinforces Micron's leadership in high-performance, high-capacity server memory and provides enterprise data center and cloud customers with a path to support large and demanding AI, analytics, in-memory database and simulation-heavy workloads with greater efficiency. Leading semiconductor enablers, AMD and Intel, are both actively validating the module, which will deliver speeds up to 9,200 MT/s. The module's high capacity is possible due to Micron's advanced vertical interconnect packaging innovations. This product vertically stacks DRAM dies interconnected by through-silicon vias (TSVs) to maximize density within individual DRAM packages while preserving the performance modern data center architectures demand. The module enables up to 12 TB of DDR5 DRAM in a single 24-slot

The coverage

  1. Micron unveils 512GB DDR5 RDIMM for next-gen servers

    digitimes.com · 2h

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